jiangsu changjiang ele ctronics technology co., ltd sop8 plastic-encapsulate mosfets cj q 4953 p-channel 30-v(d-s) mosfet maximum ratings (t a =25 unless otherw ise not ed) parameter symbol value unit drain-source voltag e v ds -30 gate-source voltag e v gs 20 v continuous dr ain c urrent ( t 10s) i d - 5 a powe r diss ipation ( t 10s) p d 1.25 w thermal resistance from jun c tion to ambient ( t 10s) r ja 100 /w junction t e mperature t j 150 storage temperature t stg -55~+150 sop8 v (br)dss r ds(on) max i d -30 v 60 m @ -10 v ? -5 a ? 90 m -4.5 v ? @ marking: equivalent circuit www.cj-elec.com 1 g , ma r ,201 6 solid dot = green molding compound device, if none,the normal device. q4953 = device code yy =da t e code solid dot = pin1 indicator 1 23 4 5 6 7 8 s1 g1 s 2 g2 d2 d2 d1 d1
para meter symbol test condition min typ max units static drain-s ource breakdown voltage v (b r)dss v gs =0 v, i d = -250a -30 v gate-thresho ld voltage v gs( th) v ds =v gs , i d = -250a -1.0 -1.5 v gate-bod y leakage i gss v ds =0 v, v gs =20v 10 0 na z ero gate voltage drain current i ds s v ds = -30v, v gs =0 v -1 a v gs = -10v, i d =-4.9a 50 60 drain-s ource on-resistance a r ds (on ) v gs = -4.5v, i d = -3.7a 66 90 m? f orward transconductance a g fs v ds = -10v, i d =-4.9a 6.0 s diod e forward voltage a v sd i s = -1.7a,v gs =0 v -1.2 v dy namic b t otal gate charge q g 25 gate-source c harge q gs 4 gate-drain charge q gd v ds = -15v,v gs = -10v,i d = -4.9a 2 nc t urn-on delay time t d ( on) 15 rise time t r 20 t urn-off delay time t d( off) 80 fall time t f v dd = -15v,r l =1 5 ?, i d -1a, v gen = -10v,r g =6 ? 40 ns no tes : a. pulse test : pulse width 300s, duty cycle 2%. b. guaranteed by design, not su bject to production testing. 0 2 6 ) ( 7 ( / ( & |